參數(shù)資料
型號(hào)： K9F1G08Q0M-YCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb Gb 1.8V NAND Flash Errata
中文描述： 1Gb的NAND閃存千兆1.8V的勘誤表
文件頁數(shù)： 17/38頁
文件大小： 713K
代理商： K9F1G08Q0M-YCB0
FLASH MEMORY
16
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal
2112byte(X8 device) or 1056word(X16 device) data registers are utilized as separate buffers for this operation and the system
design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activat-
ing CE during the data-loading and serial access would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Address(4Cycles)
80h
Data Input
CE
CLE
ALE
WE
Data Input
CE don’t-care
≈
≈
10h
Address(4Cycle)
00h
CE
CLE
ALE
WE
Data Output(serial access)
CE don’t-care
≈
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
0
~
7
Figure 5. Read Operation with CE don’t-care.
30h
I/Ox
I/Ox
相關(guān)PDF資料
PDF描述
K9F2808Q0B-DCB0 16M x 8 Bit NAND Flash Memory
K9F2808Q0B-DIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-DCB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-DIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0M-YIB0 16M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08Q0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08R0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
K9F1G08R0B-JIB0000 制造商:Samsung SDI 功能描述:PN may be NE SE
K9F1G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
K9F1G08U0B-PCB0000 制造商:Samsung SDI 功能描述: 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 TSOP1 - Trays
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