參數(shù)資料
型號： K9F1G08U0M-FCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb Gb 1.8V NAND Flash Errata
中文描述： 1Gb的NAND閃存千兆1.8V的勘誤表
文件頁數(shù)： 2/38頁
文件大小： 713K
代理商： K9F1G08U0M-FCB0
FLASH MEMORY
1
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
Document Title
128M x 8 Bit / 64M x 16 Bit
NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Remark
Advance
History
1. Initial issue
1. Iol(R/B) of 1.8V is changed.
- min. value : 7mA --> 3mA
- Typ. value : 8mA --> 4mA
2. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
3. A recovery time of minimum 1
μ
s is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
---> A recovery time of minimum 10
μ
s is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
1. ALE status fault in ’Random data out in a page’ timing diagram(page 19)
is fixed.
1. tAR1, tAR2 are merged to tAR.(Page11)
(Before revision) min. tAR1 = 10ns , min. tAR2 = 50ns
(After revision) min. tAR = 10ns
2. min. tCLR is changed from 50ns to 10ns.(Page11)
3. min. tREA is changed from 35ns to 30ns.(Page11)
4. min. tWC is changed from 50ns to 45ns.(Page11)
5. tRHZ is devided into tRHZ and tOH.(Page11)
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
6. tCHZ is devided into tCHZ and tOH.(Page11)
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 36)
The min. Vcc value 1.8V devices is changed.
K9F1GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F1G08U0M-FCB0,FIB0
K9F1G08Q0M-PCB0,PIB0
K9F1G08U0M-PCB0,PIB0
K9F1G16U0M-PCB0,PIB0
K9F1G16Q0M-PCB0,PIB0
Draft Date
July. 5. 2001
Nov. 5. 2001
Dec. 4. 2001
Apr. 25. 2002
Nov. 22.2002
Mar. 6.2003
Mar. 13.2003
相關(guān)PDF資料
PDF描述
K9F1G08U0M-FIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-PCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-PIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-VCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-VIB0 Industrial Mid-Range Soldering Iron; Power Rating:60W; Tip Temperature:850 F; Features:Incls.: One 67D 1/4" Dia., 3-3/8" L Long-Tapered Diamond-Style Paragon Soldering Tip RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08U0M-FIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-VCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-VIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*