- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374296 > K9F1G08U0M-PIB0 (SAMSUNG SEMICONDUCTOR CO. LTD.) 1Gb Gb 1.8V NAND Flash Errata PDF資料下載
參數(shù)資料
| 型號： | K9F1G08U0M-PIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Gb Gb 1.8V NAND Flash Errata |
| 中文描述： | 1Gb的NAND閃存千兆1.8V的勘誤表 |
| 文件頁數(shù)： | 17/38頁 |
| 文件大小： | 713K |
| 代理商： | K9F1G08U0M-PIB0 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁當(dāng)前第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁
FLASH MEMORY
16
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal
2112byte(X8 device) or 1056word(X16 device) data registers are utilized as separate buffers for this operation and the system
design gets more flexible. In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activat-
ing CE during the data-loading and serial access would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Address(4Cycles)
80h
Data Input
CE
CLE
ALE
WE
Data Input
CE don’t-care
≈
≈
10h
Address(4Cycle)
00h
CE
CLE
ALE
WE
Data Output(serial access)
CE don’t-care
≈
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
0
~
7
Figure 5. Read Operation with CE don’t-care.
30h
I/Ox
I/Ox
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1G08U0M-VCB0 | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08U0M-VIB0 | Industrial Mid-Range Soldering Iron; Power Rating:60W; Tip Temperature:850 F; Features:Incls.: One 67D 1/4" Dia., 3-3/8" L Long-Tapered Diamond-Style Paragon Soldering Tip RoHS Compliant: Yes |
| K9F1G08U0M-YIB0 | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G16Q0M-PCB0 | 1Gb Gb 1.8V NAND Flash Errata |
| K9F1G16Q0M-YIB0 | 1Gb Gb 1.8V NAND Flash Errata |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1G08U0M-VCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08U0M-VIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08U0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08U0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08UOC-PCB000 | 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 FBGA - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。