參數(shù)資料
型號: K9F1G08U0M-PIB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb Gb 1.8V NAND Flash Errata
中文描述: 1Gb的NAND閃存千兆1.8V的勘誤表
文件頁數(shù): 3/38頁
文件大?。?/td> 713K
代理商: K9F1G08U0M-PIB0
FLASH MEMORY
2
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
Document Title
128M x 8 Bit / 64M x 16 Bit
NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
Revision No
0.7
0.8
Remark
History
Errata is added.(Front Page)-K9F1GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Specification 45 25 15 50 15 25 30 45
Relaxed value 80 60 20 60 80 60 60 75
1. The 3rd Byte ID after 90h ID read command is don’t cared.
The 5th Byte ID after 90h ID read command is deleted.
Draft Date
Mar.17. 2003
Apr. 9. 2003
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K9F1G08U0M-VCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
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