參數(shù)資料
型號: K9F1G08U0M-VCB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb Gb 1.8V NAND Flash Errata
中文描述: 1Gb的NAND閃存千兆1.8V的勘誤表
文件頁數(shù): 23/38頁
文件大?。?/td> 713K
代理商: K9F1G08U0M-VCB0
FLASH MEMORY
22
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
X8 device : m = 2112byte
X16 device : m = 1056word
Page Program Operation
CE
CLE
R/B
WE
ALE
RE
80h
70h
I/O
0
Din
N
1 up to m Byte
Serial Input
Din
M
10h
SerialData
Input Command
Column Address
Row Address
Program
Command
Read Status
Command
I/O
0
=0 Successful Program
I/O
0
=1 Error in Program
t
PROG
t
WB
t
WC
t
WC
t
WC
I/Ox
Co.l Add1
Col. Add2
Row Add1
Row Add2
相關PDF資料
PDF描述
K9F1G08U0M-VIB0 Industrial Mid-Range Soldering Iron; Power Rating:60W; Tip Temperature:850 F; Features:Incls.: One 67D 1/4" Dia., 3-3/8" L Long-Tapered Diamond-Style Paragon Soldering Tip RoHS Compliant: Yes
K9F1G08U0M-YIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-PCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-YIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-PCB0 1Gb Gb 1.8V NAND Flash Errata
相關代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08U0M-VIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08UOC-PCB000 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 FBGA - Trays
K9F1G16D0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory