參數(shù)資料
型號(hào)： K9F1G08U0M-VCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb Gb 1.8V NAND Flash Errata
中文描述： 1Gb的NAND閃存千兆1.8V的勘誤表
文件頁數(shù)： 9/38頁
文件大?。?/td> 713K
代理商： K9F1G08U0M-VCB0
FLASH MEMORY
8
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
1K Words
32 Words
Figure 1-2. K9F1G16X0M (X16) Functional Block Diagram
Figure 2-2. K9F1G16X0M (X16) Array Organization
NOTE
: Column Address : Starting Address of the Register.
* L must be set to "Low".
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O8 ~ 15
1st Cycle
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
*L
2nd Cycle
A
8
A
9
A
10
*L
*L
*L
*L
*L
*L
3rd Cycle
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
*L
4th Cycle
A
19
A
20
A
21
A
22
A
23
A
24
A
25
A
26
*L
V
CC
V
SS
X-Buffers
Latches
& Decoders
Command
Register
I/O Buffers & Latches
Y-Buffers
Latches
& Decoders
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
A
11
- A
26
A
0
- A
10
Command
CE
RE
WE
CLE
WP
I/0 0
I/0 15
V
CC
V
SS
64K Pages
(=1,024 Blocks)
1K Words
16 bit
32 Words
1 Block = 64 Pages
(64K + 2k) Word
I/O 0 ~ I/O 15
1 Page = (1K + 32)Words
1 Block = (1K + 32)Word x 64 Pages
= (64K + 2K) Words
1 Device = (1K+32)Word x 64Pages x 1024 Blocks
= 1056 Mbits
Row Address
Page Register
ALE PRE
1024M + 32M Bit
NAND Flash
ARRAY
(512 + 64)Word x 65536
Y-Gating
Cache Register
Row Address
Column Address
Column Address
Data Register & S/A
相關(guān)PDF資料
PDF描述
K9F1G08U0M-VIB0 Industrial Mid-Range Soldering Iron; Power Rating:60W; Tip Temperature:850 F; Features:Incls.: One 67D 1/4" Dia., 3-3/8" L Long-Tapered Diamond-Style Paragon Soldering Tip RoHS Compliant: Yes
K9F1G08U0M-YIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-PCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-YIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-PCB0 1Gb Gb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08U0M-VIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08UOC-PCB000 制造商:Samsung Semiconductor 功能描述:1GB SLC NORMAL X8 FBGA - Trays
K9F1G16D0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*