參數(shù)資料
型號： K9F1G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb Gb 1.8V NAND Flash Errata
中文描述： 1Gb的NAND閃存千兆1.8V的勘誤表
文件頁數(shù)： 32/38頁
文件大小： 713K
代理商： K9F1G08U0M
FLASH MEMORY
31
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
Cache Program
Figure 9. Random Data Input In a Page
80h
R/B
Address & Data Input
I/O
0
Pass
10h
70h
Fail
t
PROG
85h
Address & Data Input
Cache Program is an extension of Page Program, which is executed with 2112byte(X8 device) or 1056word(X16 device) data regis-
ters, and is available only within a block. Since the device has 1 page of cache memory, serial data input may be executed while
data stored in data register are programmed into memory cell.
After writing the first set of data up to 2112byte(X8 device) or 1056word(X16 device) into the selected cache registers, Cache Pro-
gram command (15h) instead of actual Page Program (10h) is inputted to make cache registers free and to start internal program
operation. To transfer data from cache registers to data registers, the device remains in Busy state for a short period of time(tCBSY)
and has its cache registers ready for the next data-input while the internal programming gets started with the data loaded into data
registers. Read Status command (70h) may be issued to find out when cache registers become ready by polling the Cache-Busy sta-
tus bit(I/O 6). Pass/fail status of only the previouse page is available upon the return to Ready state. When the next set of data is
inputted with the Cache Program command, tCBSY is affected by the progress of pending internal programming. The programming
of the cache registers is initiated only when the pending program cycle is finished and the data registers are available for the transfer
of data from cache registers. The status bit(I/O5) for internal Ready/Busy may be polled to identify the completion of internal pro-
gramming. If the system monitors the progress of programming only with R/B, the last page of the target programming sequence
must be progammed with actual Page Program command (10h). If the Cache Program command (15h) is used instead, status bit (I/
O5) must be polled to find out when the last programming is actually finished before starting other operations such as read. Pass/fail
status is available in two steps. I/O 1 returns with the status of the previous page upon Ready or I/O6 status bit changing to "1", and
later I/O 0 with the status of current page upon true Ready (returning from internal programming) or I/O 5 status bit changing to "1". I/
O 1 may be read together when I/O 0 is checked.
Figure 10. Cache Program
(available only within a block)
80h
R/B
80h
Address &
Data Input
15h
80h
Address &
Data Input
15h
80h
Address &
Data Input
10h
t
CBSY
t
CBSY
t
CBSY
t
PROG
70h
Address &
Data Input*
15h
80h
R/B
70h
t
CBSY
Address &
Data Input
Col Add1,2 & Row Add1,2
Data
15h
Status
80h
70h
t
CBSY
Address &
Data Input
Col Add1,2 & Row Add1,2
Data
15h
Status
80h
t
CBSY
Address &
Data Input
Col Add1,2 & Row Add1,2
Data
15h
80h
t
CBSY
Address &
Data Input
Col Add1,2 & Row Add1,2
Data
15h
70h
output
70h
Status
output
Check I/O5 for internal ready/busy
Check I/O0,1 for pass/fail
Check I/O1 for pass/fail
I/Ox
I/Ox
Col Add1,2 & Row Add1,2
Data
Col Add1,2
Data
Col Add1,2 & Row Add1,2
Data
Col Add1,2 & Row Add1,2
Data
Col Add1,2 & Row Add1,2
Data
Col Add1,2 & Row Add1,2
Data
"0"
"1"
相關(guān)PDF資料
PDF描述
K9F1G08U0M-FCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-FIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-PCB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-PIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-VCB0 1Gb Gb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08U0M-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-FIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08U0M-VCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
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