參數(shù)資料
型號(hào)： K9F1G16U0M-PCB0
廠(chǎng)商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb Gb 1.8V NAND Flash Errata
中文描述： 1Gb的NAND閃存千兆1.8V的勘誤表
文件頁(yè)數(shù)： 33/38頁(yè)
文件大?。?/td> 713K
代理商： K9F1G16U0M-PCB0
FLASH MEMORY
32
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
Copy-Back Program
Figure 11. Page Copy-Back program Operation
00h
R/B
Add.(4Cycles)
I/O
0
Pass
85h
70h
Fail
t
PROG
Add.(4Cycles)
t
R
Source Address
Destination Address
The copy-back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory.
Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The ben-
efit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned
free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copy-
ing-program with the address of destination page. A read operation with "35h" command and the address of the source page moves
the whole 2112byte(X8 device) or 1056word(X16 device) data into the internal data buffer. As soon as the device returns to Ready
state, Page-Copy Data-input command (85h) with the address cycles of destination page followed may be written. The Program
Confirm command (10h) is required to actually begin the programming operation. Data input cycle for modifying a portion or multiple
distant portions of the source page is allowed as shown in Figure 12.
"When there is a program-failure at Copy-Back operation,
error is reported by pass/fail status. But, if Copy-Back operations are accumulated over time, bit error due to charge loss is
not checked by external error detection/correction scheme. For this reason, two bit error correction is recommended for
the use of Copy-Back operation."
35h
NOTE
: Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if
the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after com-
pletion of the previous cycle, which can be expressed as the following formula.
tPROG= Program time for the last page+ Program time for the ( last -1 )th page
- (Program command cycle time + Last page data loading time)
10h
Figure 12. Page Copy-Back program Operation with Random Data Input
00h
R/B
Add.(4Cycles)
85h
70h
t
PROG
Add.(4Cycles)
t
R
Source Address
Destination Address
Data
35h
10h
85h
Data
Add.(2Cycles)
There is no limitation for the number of repetition.
I/Ox
I/Ox
Col. Add1,2 & Row Add1,2
Col. Add1,2 & Row Add1,2
Col. Add1,2 & Row Add1,2
Col. Add1,2 & Row Add1,2
Col Add1,2
相關(guān)PDF資料
PDF描述
K9F1G16U0M-PIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-YIB0 1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
K9F2808Q0B-DCB0 16M x 8 Bit NAND Flash Memory
K9F2808Q0B-DIB0 16M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G16U0M-PIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-YCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-YIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G8U0C-PIB0T00 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 FBGA - Trays
K9F2808Q0B 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
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