參數(shù)資料
型號(hào): K9F1G16U0M-YIB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb Gb 1.8V NAND Flash Errata
中文描述: 1Gb的NAND閃存千兆1.8V的勘誤表
文件頁數(shù): 1/38頁
文件大小: 713K
代理商: K9F1G16U0M-YIB0
San 16 Banwol-Ri
Taean-Eup Hwasung- City
Kyungki Do, Korea
Tel.) 82 - 31 - 208 - 6463
Fax.) 82 - 31 -208 - 6799
March. 2003
ELECTRONICS
1
1
1
Gb
1.8V NAND Flash Errata
Description
: Some of AC characteristics are not meeting the specification.
> AC characteristics : Refer to Table
Affected Products
: K9F1G08Q0M-YCB0/YIB0, K9F1G16Q0M-YCB0/YIB0
K9K2G08Q0M-YCB0/YIB0, K9K2G16Q0M-YCB0/YIB0
Improvement schedule
: The components targeted to meet the specification
is scheduled to be available by workweek 25 along
with the final specification values.
Sincerely,
chwoosun@sec.samsung.com
Product Planning & Application Eng.
Memory Division
Samsung Electronics Co.
Table
Parameters
Specification
Relaxed Condition
tWC
45
80
tWH
15
20
tWP
25
60
tRC
50
80
tREH
15
20
tRP
25
60
tREA
30
60
UNIT : ns
Workaround
: Relax the relevant timing parameters according to the table.
tCEA
45
75
相關(guān)PDF資料
PDF描述
K9F1G08Q0M-YCB0 1Gb Gb 1.8V NAND Flash Errata
K9F2808Q0B-DCB0 16M x 8 Bit NAND Flash Memory
K9F2808Q0B-DIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-DCB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-DIB0 16M x 8 Bit NAND Flash Memory
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