參數(shù)資料
型號(hào): K9F2808Q0B-DCB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M x 8 Bit NAND Flash Memory
中文描述: 1,600 × 8位NAND閃存
文件頁(yè)數(shù): 21/29頁(yè)
文件大?。?/td> 304K
代理商: K9F2808Q0B-DCB0
FLASH MEMORY
21
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
READ2 OPERATION
(READ ONE PAGE)
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
50h
A
0
~ A
7
A
9
~ A
16
A
17
~ A
23
Dout
511+M
Dout 527
M Address
Dout
511+M+1
t
AR2
t
R
t
WB
t
RR
A
0
~A
3
: Valid Address
A
4
~A
7
: Don
t
care
Selected
Row
Start
address M
512
16
PAGE PROGRAM OPERATION
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
80h
70h
I/O
0
Din
N
1 up to 528 Byte Data
Serial Input
Din
N+1
Din
527
10h
A
0
~ A
7
A
17
~ A
23
A
9
~ A
16
Sequential Data
Input Command
Column
Address
Page(Row)
Address
Program
Command
Read Status
Command
I/O
0
=0 Successful Program
I/O
0
=1 Error in Program
t
PROG
t
WB
t
WC
t
WC
t
WC
On K9F2808U0B_Y or K9F2808U0B_V
CE must be held
low during tR
相關(guān)PDF資料
PDF描述
K9F2808Q0B-DIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-DCB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-DIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0M-YIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0M-YCB0 16M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2808Q0B-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808Q0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808Q0C-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808Q0C-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808Q0C-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory