參數(shù)資料
型號: K9F2808U0B-V
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 16M x 8 Bit NAND Flash Memory
中文描述: 1,600 × 8位NAND閃存
文件頁數(shù): 29/29頁
文件大?。?/td> 304K
代理商: K9F2808U0B-V
FLASH MEMORY
29
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V/2V(K9F2808Q0B:1.1V, K9F2808U0B:2V). WP pin provides hardware pro-
tection and is recommended to be kept at V
IL
during power-up and power-down and recovery time of minimum 1
μ
s is required
before internal circuit gets ready for any command sequences as shown in Figure 14. The two step command sequence for program/
erase provides additional software protection.
Figure 14. AC Waveforms for Power Transition
V
CC
WP
High
K9F2808Q0B : ~ 1.5V
K9F2808U0B : ~ 2.5V
WE
Data Protection & Powerup sequence
K9F2808Q0B : ~ 1.5V
K9F2808U0B : ~ 2.5V
10
μ
s
相關(guān)PDF資料
PDF描述
K9F2808U0B-VCB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-Y 16M x 8 Bit NAND Flash Memory
K9F2808U0C-VCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0C-DCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0C-VIB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2808U0B-VCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-VIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory