參數(shù)資料
型號： K9F2808U0B-VCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit NAND Flash Memory
中文描述： 1,600 × 8位NAND閃存
文件頁數(shù)： 10/29頁
文件大?。?/td> 304K
代理商： K9F2808U0B-VCB0
FLASH MEMORY
10
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins and -0.2V on Vcc and VccQ pins. During transitions, this level may undershoot to -2.0V for periods
<20ns. Maximum DC voltage on input/output pins is V
CCQ
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9F2808Q0B(1.8V)
K9F2808U0B(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
V
V
CC
Q
-0.2 to + 2.45
-0.6 to + 4.6
V
Temperature
Under Bias
K9F2808X0B-YCB0,DCB0
T
BIAS
-10 to + 125
°
C
K9F2808X0B-YIB0,DIB0
-40 to + 125
Storage Temperature
T
STG
-65 to + 150
°
C
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F2808X0B-YCB0,DCB0:T
A
=0 to 70
°
C, K9F2808X0B-YIB0,DIB0:T
A
=-40 to 85
°
C)
Parameter
Symbol
K9F2808Q0B(1.8V)
K9F2808U0B(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.7
1.8
1.9
2.7
3.3
3.6
V
Supply Voltage
V
CC
Q
1.7
1.8
1.9
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
K9F2808Q0B(1.8V)
K9F2808U0B(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Sequential Read
I
CC
1
CE=V
IL,
I
OUT
=0mA
K9F2808Q0B: tRC=70ns
K9F2808U0B: tRC=50ns
-
5
15
-
10
20
mA
Program
I
CC
2
-
-
5
15
-
10
20
Erase
I
CC
3
-
-
5
15
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Input High Voltage
V
IH
I/O pins
VccQ-0.4
VccQ+0
.3
2.0
-
V
CC
Q+0.3
V
Except I/O pins
V
CC
-0.4
-
VCC
+0.3
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.4
-0.3
-
0.8
Output High Voltage Level
V
OH
K9F2808Q0B :I
OH
=-100
μ
A
K9F2808U0B :I
OH
=-400
μ
A
V
CC
Q-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9F2808Q0B :I
OL
=100uA
K9F2808U0B :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F2808Q0B :V
OL
=0.1V
K9F2808U0B :V
OL
=0.4V
3
4
-
8
10
-
mA
相關(guān)PDF資料
PDF描述
K9F2808U0B-Y 16M x 8 Bit NAND Flash Memory
K9F2808U0C-VCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0C-DCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0C-VIB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0B-VIB0 16M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2808U0B-VIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0B-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
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