參數(shù)資料
型號： K9F2808U0C-DCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
中文描述： 1,600 × 8位，8米× 16位NAND閃存
文件頁數(shù)： 23/29頁
文件大小： 304K
代理商： K9F2808U0C-DCB0
FLASH MEMORY
23
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
DEVICE OPERATION
PAGE READ
Upon initial device power up, the device status is initially Read1 command(00h) latched. This operation is also initiated by wrting
00h to the command register along with three address cycles. Once the command is latched, it does not need to be written for the fol-
lowing page read operation. Two types of operation are available : random read, serial page read. The random read mode is enabled
when the page address is changed. The 528 bytes of data within the selected page are transferred to the data registers in less than
10
μ
s(tR). The system controller can detect the completion of this data transfer(tR) by analyzing the output of R/B pin. Once the data
in a page is loaded into the registers, they may be read out by sequential RE pulse of 70ns/50n(K9F2808Q0B:70ns,
K9F2808U0B:50ns) period cycle. High to low transitions of the RE clock take out the data from the selected column address up to
the last column address.
Read1 and Read2 commands determine pointer which selects either main area or spare area. The spare area(512 to 527 bytes)
may be selectively accessed by writing the Read2 command. Addresses A
0
to A
3
set the starting address of spare area while
addresses A
4
to A
7
are ignored. To move the pointer back to the main area, Read1 command(00h/01h) is needed. Figures 7
through 8 show typical sequence and timing for each read operation.
Figure 7,8 details the sequence.
Sequential Row Read is available only on K9F2808U0B_Y or K9F2808U0B_V :
After the data of last column address is clocked out, the next page is automatically selected for sequential row read. Waiting 10
μ
s
again allows reading the selected page. The sequential row read operation is terminated by bringing CE high. Unless the operation
is aborted, the page address is automatically incremented for sequential row read as in Read1 operation and spare sixteen bytes of
each page may be sequentially read. The Sequential Read 1 and 2 operation is allowed only within a block and after the last page
of a block is readout, the sequential read operation must be terminated by bringing CE high. When the page address moves onto the
next block, read command and address must be given. Figures 7-1, 8-1 show typical sequence and timings for sequential row read
operation.
Figure 7. Read1 Operation
Start Add.(3Cycle)
A
0
~ A
7
& A
9
~ A
23
00h
Data Output(Sequential)
(00h Command)
Data Field
Spare Field
CE
CLE
ALE
R/B
WE
I/O
0
~
7
RE
t
R
* After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half array (00h) at next cycle.
(01h Command)*
Data Field
Spare Field
1st half array
2st half array
1st half array
2st half array
On K9F2808U0B_Y or K9F2808U0B_V
CE must be held
low during tR
相關(guān)PDF資料
PDF描述
K9F2808U0C-VIB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0B-VIB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-YIB0 16M x 8 Bit NAND Flash Memory
K9F2808Q0B TV 37C 37#16 SKT RECP
K9F2808Q0B-D TV 37C 37#16 SKT RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2808U0C-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
K9F2808U0C-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-FIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*