參數(shù)資料
型號(hào)： K9F2808U0C-DIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
中文描述： 1,600 × 8位，8米× 16位NAND閃存
文件頁數(shù)： 11/29頁
文件大?。?/td> 304K
代理商： K9F2808U0C-DIB0
FLASH MEMORY
11
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH.
2. WP should be biased to CMOS high or CMOS low for standby.
Program/Erase Characteristics
CLE
ALE
CE
WE
RE
WP
Mode
H
L
L
H
X
Read Mode
Command Input
L
H
L
H
X
Address Input(3clock)
H
L
L
H
H
Write Mode
Command Input
L
H
L
H
H
Address Input(3clock)
L
L
L
H
H
Data Input
L
L
L
H
X
Data Output
L
L
L
H
H
X
During Read(Busy) on K9F2808U0B_Y or K9F2808U0B_V
X
X
X
X
H
X
During Read(Busy) on the devices except K9F2808U0B_Y
and K9F2808U0B_V
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
Stand-by
CAPACITANCE
(
T
A
=25
°
C, V
CC
=1.8V/3.3V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
VALID BLOCK
NOTE
:
1. The
K9F2808X0B
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks
is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
. Do not erase or
program factory-marked bad blocks.
Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correcton.
AC TEST CONDITION
(K9F2808X0B-YCB0, DCB0 :TA=0 to 70
°
C, K9F2808X0B-YIB0,DIB0:TA=-40 to 85
°
C
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
1004
-
1024
Blocks
K9F2808Q0B : Vcc=1.7V~1.9V , K9F2808U0B : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F2808Q0B
K9F2808U0B
Input Pulse Levels
0V to VccQ
0.4V to 2.4V
Input Rise and Fall Times
5ns
5ns
Input and Output Timing Levels
VccQ/2
1.5V
K9F2808Q0B:Output Load (VccQ:1.8V +/-10%)
K9F2808U0B:Output Load (VccQ:3.0V +/-10%)
1 TTL GATE and CL=30pF
1 TTL GATE and CL=50pF
K9F2808U0B:Output Load (VccQ:3.3V +/-10%)
-
1 TTL GATE and CL=100pF
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
K9F2808Q0B:300
K9F2808U0B:200
500
μ
s
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
2
cycles
Spare Array
-
-
3
cycles
Block Erase Time
t
BERS
-
2
3
ms
相關(guān)PDF資料
PDF描述
K9F2808U0B-D 16M x 8 Bit NAND Flash Memory
K9F2808U0B-V 16M x 8 Bit NAND Flash Memory
K9F2808U0B-VCB0 16M x 8 Bit NAND Flash Memory
K9F2808U0B-Y 16M x 8 Bit NAND Flash Memory
K9F2808U0C-VCB0 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F2808U0C-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-FIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
K9F2808U0C-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*