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參數(shù)資料
| 型號： | K9F2808U0M-YCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit NAND Flash Memory |
| 中文描述： | 1,600 × 8位NAND閃存 |
| 文件頁數(shù)： | 3/29頁 |
| 文件大?。?/td> | 304K |
| 代理商： | K9F2808U0M-YCB0 |
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FLASH MEMORY
3
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
GENERAL DESCRIPTION
FEATURES
Voltage Supply
- K9F2808Q0B : 1.7~1.9V
- K9F2808U0B : 2.7 ~ 3.6 V
Organization
- Memory Cell Array : (16M + 512K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
528-Byte Page Read Operation
- Random Access : 10
μ
s(Max.)
- Serial Page Access
- K9F2808Q0B : 70ns
- K9F2808U0B : 50ns
Fast Write Cycle Time
- Program Time
- K9F2808Q0B : 300
μ
s(Typ.)
- K9F2808U0B : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Package
- K9F2808U0B-YCB0/YIB0 :
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2808X0B-DCB0/DIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F2808U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
* K9F2808U0B-V(WSOPI ) is the same device as
K9F2808U0B-Y(TSOP1) except package type.
The K9F2808X0B is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. The device is offered in 1.8V or
3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation pro-
grams the 528-byte page in typical 200
μ
s and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in a
page can be read out at 70ns/50ns(K9F2808Q0B:70ns, K9F2808U0B:50ns) cycle time per byte. The I/O pins serve as the ports for
address and data input/output as well as command input. The on-chip write control automates all program and erase functions
including pulse repetition, where required, and internal verification and margining of data. Even write-intensive systems can take
advantage of the K9F2808X0B’s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with
real time mapping-out algorithm.
The K9F2808X0B is suitable for use in data memory of mobile communication system to reduce not only mount area but also power
consumption.
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F2808Q0B-D
1.7 ~ 1.9V
X8
TBGA
K9F2808U0B-Y
2.7 ~ 3.6V
TSOP1
K9F2808U0B-D
TBGA
K9F2808U0B-V
WSOP1
16M x 8 Bit Bit NAND Flash Memory
相關PDF資料 |
PDF描述 |
|---|---|
| K9F2808U0B-YCB0 | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0C-DIB0 | 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2808U0B-D | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-V | 16M x 8 Bit NAND Flash Memory |
| K9F2808U0B-VCB0 | 16M x 8 Bit NAND Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9F2808U0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2816Q0C-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816Q0C-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit , 8M x 16 Bit NAND Flash Memory |
| K9F2816Q0C-HCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
| K9F2816Q0C-HIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory |
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