參數(shù)資料
型號(hào)： K9F5608Q0C-HCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb/256Mb 1.8V NAND Flash Errata
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁(yè)數(shù)： 19/39頁(yè)
文件大小： 655K
代理商： K9F5608Q0C-HCB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
18
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
System Interface Using CE don’t-care.
CE
WE
t
WP
t
CH
t
CS
Start Add.(3Cycle)
80h
Data Input
CE
CLE
ALE
WE
Data Input
CE don’t-care
≈
≈
10h
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte/264word page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addi-
tion, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading
and reading would provide significant savings in power consumption.
Start Add.(3Cycle)
00h
CE
CLE
ALE
WE
Data Output(sequential)
CE don’t-care
≈
R/B
t
R
RE
t
CEA
out
t
REA
CE
RE
I/O
0
~
15
Figure 6. Program Operation with CE don’t-care.
Figure 7. Read Operation with CE don’t-care.
On K9F5608U0C_Y,P or K9F5608U0C_V,F
CE must be held
low during tR
I/Ox
I/Ox
t
OH
相關(guān)PDF資料
PDF描述
K9F5608Q0C-HIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-DCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-DIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-FCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-FIB0 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5608Q0C-HIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5608R0D 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608R0D-FCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608R0D-FIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608R0D-J 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
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