參數(shù)資料
型號: K9F5608U0C-HIB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Mb/256Mb 1.8V NAND Flash Errata
中文描述: 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁數(shù): 23/39頁
文件大?。?/td> 655K
代理商: K9F5608U0C-HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
22
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
READ1 OPERATION
(INTERCEPTED BY CE)
CE
CLE
R/B
WE
ALE
RE
Busy
Dout N
Dout N+1
Dout N+2
Dout N+3
Page(Row)
Address
Address
Column
t
WB
t
AR
t
CHZ
t
OH
t
R
t
RR
t
RC
READ2 OPERATION
(READ ONE PAGE)
CE
CLE
R/B
WE
ALE
RE
50h
Dout
n+M
Dout n+m
M Address
Dout
n+M+1
Selected
Row
Start
address M
n
m
t
AR
t
R
t
WB
t
RR
X8 device : A
0
~A
3
are Valid Address & A
4
~A
7
are Don
t
care
X16 device : A
0
~A
2
are Valid Address & A
3
~A
7
are "L"
X8 device : n = 512, m = 16
X16 device : n = 256, m = 8
N Address
CMD
Read
I/Ox
I/Ox
Col. Add
Row Add1
Row Add2
Col. Add
Row Add1
Row Add2
On K9F5608U0C_Y,P or K9F5608U0C_V,F
CE must be held
low during tR
On K9F5608U0C_Y,P or K9F5608U0C_V,F
CE must be held
low during tR
相關(guān)PDF資料
PDF描述
K9F5608U0C-PCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-PIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-VCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-VIB0 TV 3C 3#20 PIN WALL RECP
K9F5608U0C-YCB0 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5608U0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0C-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-PCB0T00 制造商:Samsung Semiconductor 功能描述:FLASH PARALLEL 3.3V 256MBIT 32MX8 10US 48TSOP - Tape and Reel
K9F5608U0C-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-V 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory