參數(shù)資料
型號： K9F5608U0C-HIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb/256Mb 1.8V NAND Flash Errata
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁數(shù)： 35/39頁
文件大小： 655K
代理商： K9F5608U0C-HIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
34
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
Program/Erase OPERATION(In Locked or Lock-tighten Block)
On the program or erase operation in Locked or Lock-tighten block, Busy state holds 1~10
m
s(
t
LBSY)
60h(80h)
R/B
Address(&Data Input)
D0h(10h)
t
LBSY
I/Ox
Locked or Lock-tighten Block address
unlock
Lock
Lock
Lock-tight
Power-up
WPx = H &
Unlock block Command (23h) + Start Block Address
+ Command (24h) + End Block Address
Block Lock reset
WPx = L (>100ns)
Block Lock reset
WPx = L (>100ns)
WPx = H &
Lock block command (2Ah)
WPx = H &
Lock-tight block command (2Ch)
unlock
Lock
unlock
Lock-tight
Figure 15. State diagram of Block Lock
Lock-tight
Lock-tight block command (2Ch)
Lock
Lock
WPx = H &
WPx = H &
Unlock block Command (23h) + Start Block Address
+ Command (24h) + End Block Address
相關(guān)PDF資料
PDF描述
K9F5608U0C-PCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-PIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-VCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-VIB0 TV 3C 3#20 PIN WALL RECP
K9F5608U0C-YCB0 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5608U0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0C-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-PCB0T00 制造商:Samsung Semiconductor 功能描述:FLASH PARALLEL 3.3V 256MBIT 32MX8 10US 48TSOP - Tape and Reel
K9F5608U0C-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-V 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
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