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參數(shù)資料
| 型號(hào)： | K9F5608U0C-P |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb/256Mb 1.8V NAND Flash Errata |
| 中文描述： | 512Mb/256Mb 1.8 NAND閃存勘誤表 |
| 文件頁(yè)數(shù)： | 13/39頁(yè) |
| 文件大?。?/td> | 655K |
| 代理商： | K9F5608U0C-P |
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K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
12
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
AC Characteristics for Operation
NOTE
:
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
t
R
-
10
μ
s
ALE to RE Delay
t
AR
10
-
ns
CLE to RE Delay
t
CLR
10
-
ns
Ready to RE Low
t
RR
20
-
ns
RE Pulse Width
t
RP
25
-
ns
WE High to Busy
t
WB
-
100
ns
Read Cycle Time
t
RC
50
-
ns
CE Access Time
t
CEA
-
45
ns
RE Access Time
t
REA
-
30
ns
RE High to Output Hi-Z
t
RHZ
-
30
ns
CE High to Output Hi-Z
t
CHZ
-
20
ns
RE or CE High to Output hold
t
OH
15
-
ns
RE High Hold Time
t
REH
15
-
ns
Output Hi-Z to RE Low
t
IR
0
-
ns
WE High to RE Low
t
WHR1
60
-
ns
WE High to RE Low in Block Lcok Mode
t
WHR2
100
-
ns
Device Resetting Time
(Read/Program/Erase)
t
RST
-
5/10/500
(1)
μ
s
K9F5608U0C-
Y,V,P,F only
Last RE High to Busy(at sequential read)
t
RB
-
100
ns
CE High to Ready(in case of interception by CE at read)
t
CRY
-
50 +tr(R/B)
(3)
ns
CE High Hold Time(at the last serial read)
(2)
t
CEH
100
-
ns
AC Timing Characteristics for Command / Address / Data Input
NOTE
:
1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
Parameter
Symbol
Min
Max
Unit
CLE Set-up Time
t
CLS
0
-
ns
CLE Hold Time
t
CLH
10
-
ns
CE Setup Time
t
CS
0
.-
ns
CE Hold Time
t
CH
10
-
ns
WE Pulse Width
t
WP
25
(1)
-
ns
ALE Setup Time
t
ALS
0
-
ns
ALE Hold Time
t
ALH
10
-
ns
Data Setup Time
t
DS
20
-
ns
Data Hold Time
t
DH
10
-
ns
Write Cycle Time
t
WC
45
-
ns
WE High Hold Time
t
WH
15
-
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F5608U0C-V | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608U0C-Y | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616Q0C | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616Q0C-D | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616Q0C-H | 512Mb/256Mb 1.8V NAND Flash Errata |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F5608U0C-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608U0C-PCB0T00 | 制造商:Samsung Semiconductor 功能描述:FLASH PARALLEL 3.3V 256MBIT 32MX8 10US 48TSOP - Tape and Reel |
| K9F5608U0C-PIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608U0C-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory |
| K9F5608U0C-VCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
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