參數(shù)資料
型號(hào)： K9F5608U0C-PCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb/256Mb 1.8V NAND Flash Errata
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁(yè)數(shù)： 34/39頁(yè)
文件大?。?/td> 655K
代理商： K9F5608U0C-PCB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
33
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
- Command Sequence: Lock-tight block Command(2Ch)
- Lock-tighten blocks offer the user an additional level of write protection beyond that of a regular lock block. A block that is lock-
tighten can’t have it’s state changed by software control, only by hardware control(WP low pulse input); Unlocking multi area is not
available
- Only locked blocks can be lock-tighten by lock-tight command.
3) Lock-tight
- Command Sequence: Unlock block Command(23h) + Start block address + Command(24h) + End block address
- Unlocked blocks can be programmed or erased.
- An unlocked block’s status can be changed to the locked or lock-tighten state using the appropriate commands.
- Only one consecutive area can be released to unlock state from lock state; Unlocking multi area is not available.
- Start block address must be nearer to the logical LSB(Least Significant Bit) than End blcok address.
- One block is selected for unlocking block when Start block address is same as End block address.
2) Unlock
CE
CLE
WE
ALE
23h
Unock Command
Add.1
Start Block Address 2cycles
I/Ox
24h
Add.2
End Block Address 2 cycles
Add.1
Add.2
Unlock Command
CE
CLE
WE
2Ch
Lock-tight Command
I/Ox
WP
WP
相關(guān)PDF資料
PDF描述
K9F5608U0C-PIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-VCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-VIB0 TV 3C 3#20 PIN WALL RECP
K9F5608U0C-YCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-YIB0 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5608U0C-PCB0T00 制造商:Samsung Semiconductor 功能描述:FLASH PARALLEL 3.3V 256MBIT 32MX8 10US 48TSOP - Tape and Reel
K9F5608U0C-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-V 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5608U0C-VCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-VIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
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