參數(shù)資料
型號(hào)： K9F5608U0M-
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 32M x 8 Bit NAND Flash Memory
中文描述： 32M的× 8位NAND閃存
文件頁(yè)數(shù)： 6/26頁(yè)
文件大?。?/td> 353K
代理商： K9F5608U0M-
K9F5608U0M-YCB0,K9F5608U0M-YIB0
FLASH MEMORY
6
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Sequential Read
I
CC
1
tRC=50ns, CE=V
IL
, I
OUT
=0mA
-
10
20
mA
Program
I
CC
2
-
-
10
20
Erase
I
CC
3
-
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=GND input (Pin #6)
= 0V/V
CC
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=GND input (Pin
#6) = 0V/V
CC
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to 3.6V
-
-
±
10
±
10
Output Leakage Current
I
LO
V
OUT
=0 to 3.6V
-
-
Input High Voltage
V
IH
-
2.0
-
V
CC
+0.3
V
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.8
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F5608U0M-YCB0
:
T
A
=0 to 70
°
C, K9F5608U0M-YIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN
-0.6 to + 4.6
V
V
CC
-0.6 to + 4.6
Temperature Under Bias
K9F5608U0M-YCB0
T
BIAS
-10 to +125
°
C
K9F5608U0M-YIB0
-40 to +125
Storage Temperature
K9F5608U0M-YCB0
T
STG
-65 to +150
°
C
K9F5608U0M-YIB0
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5608U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608UOC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5608X0D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608X0D-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
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