參數(shù)資料
型號: K9F5608U0M-YIB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 32M x 8 Bit NAND Flash Memory
中文描述: 32M的× 8位NAND閃存
文件頁數(shù): 10/26頁
文件大?。?/td> 353K
代理商: K9F5608U0M-YIB0
K9F5608U0M-YCB0,K9F5608U0M-YIB0
FLASH MEMORY
10
NAND Flash Technical Notes
(Continued)
Program Flow Chart
Start
I/O 6 = 1
or R/B = 1
Write 00h
I/O 0 = 0
No
*
If ECC is used, this verification
operation is not needed.
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
Write Address
Wait for tR Time
Verify Data
No
Program Completed
Program Error
Yes
No
Yes
*
Program Error
Yes
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
Error in write or read operation
Over its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-
ure after erase or program, block replacement should be done. To improve the efficiency of memory space, it is recommended that
the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The said additional block
failure rate does not include those reclaimed blocks.
Failure Mode
Detection and Countermeasure sequence
Write
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Read back ( Verify after Program) --> Block Replacement
or ECC Correction
Read
Single Bit Failure
Verify ECC -> ECC Correction
ECC
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
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