參數(shù)資料
型號(hào)： K9F5608U0M-YIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 32M x 8 Bit NAND Flash Memory
中文描述： 32M的× 8位NAND閃存
文件頁(yè)數(shù)： 25/26頁(yè)
文件大?。?/td> 353K
代理商： K9F5608U0M-YIB0
K9F5608U0M-YCB0,K9F5608U0M-YIB0
FLASH MEMORY
25
DATA PROTECTION
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
IL
during power-up and power-down as shown in Figure 11. The two step command sequence for program/erase provides additional
software protection.
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. An appropriate pull-up resister is required for proper
operation and the value may be calculated by the following equation.
V
CC
R/B
open drain output
Device
GND
Rp =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
3.2V
8mA
+
Σ
I
L
where I
L
is the sum of the input currents of all devices tied to the
R/B pin.
Figure 11. AC Waveforms for Power Transition
V
CC
WP
High
≈
≈
~ 2.5V
~ 2.5V
Rp
相關(guān)PDF資料
PDF描述
K9F5608U0M- 32M x 8 Bit NAND Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5608UOC 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
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K9F5608X0D-FCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608X0D-FIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608X0D-JCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
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