參數(shù)資料
型號(hào)： K9F5608U0M-YIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 32M x 8 Bit NAND Flash Memory
中文描述： 32M的× 8位NAND閃存
文件頁(yè)數(shù)： 5/26頁(yè)
文件大?。?/td> 353K
代理商： K9F5608U0M-YIB0
K9F5608U0M-YCB0,K9F5608U0M-YIB0
FLASH MEMORY
5
PIN DESCRIPTION
Command Latch Enable(CLE)
The CLE input controls the activating path for commands sent to the command register. When active high, commands are latched
into the command register through the I/O ports on the rising edge of the WE signal.
Address Latch Enable(ALE)
The ALE input controls the activating path for address to the internal address registers. Addresses are latched on the rising edge of
WE with ALE high.
Chip Enable(CE)
The CE input is the device selection control. When CE goes high during a read operation the device is returned to standby mode.
However, when the device is in the Busy state during program or erase, CE high is ignored, and does not return the device to
standby mode.
Write Enable(WE)
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse.
Read Enable(RE)
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge
of RE which also increments the internal column address counter by one.
GND (Pin # 6)
Connect this input pin to GND or set to static low state unless the sequential read mode excluding spare area is used.
I/O Port : I/O 0 ~ I/O 7
The I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to high-z
when the chip is deselected or when the outputs are disabled.
Write Protect(WP)
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage generator is reset when
the WP pin is active low.
Ready/Busy(R/B)
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is
in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition when the chip
is deselected or when outputs are disabled.
相關(guān)PDF資料
PDF描述
K9F5608U0M- 32M x 8 Bit NAND Flash Memory
K9F5616Q0B-DCB0 SCSI-5 MALE SCSI-3 MALE CABLE 10 FT
K9F5616Q0B-DIB0 MICRO D68 M/CENT50 M 2FT
K9F5616Q0B-HCB0 MICRO D68 M/CENT50 M 3FT
K9F5616Q0B-HIB0 Connector assemblies, SCSI Computer cables;
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5608UOC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5608X0D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608X0D-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608X0D-FIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
K9F5608X0D-JCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit NAND Flash Memory
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