參數資料
型號: K9F5616Q0B-DCB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: SCSI-5 MALE SCSI-3 MALE CABLE 10 FT
中文描述: 32M的× 8位,16米x 16位NAND閃存
文件頁數: 28/34頁
文件大?。?/td> 604K
代理商: K9F5616Q0B-DCB0
FLASH MEMORY
28
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
Figure 9. Read2 Operation
50h
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
Start Add.(3Cycle)
RE
t
R
X8 device : A
0
~ A
3
& A
9
~ A
24
X16 device : A
0
~ A
2
& A
9
~ A
24
Main array
Data Field
Spare Field
Figure 8-1. Sequential Row Read1 Operation
(only for K9F5608U0B-Y,P and K9F5608U0B-V,F Valid with in a block )
00h
01h
A
0
~ A
7
& A
9
~ A
24
I/Ox
R/B
Start Add.(3Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(528 Byte)
(528 Byte)
t
R
t
R
t
R
(GND input=L, 00h Command)
Data Field
Spare Field
(GND input=L, 01h Command)
Data Field
Spare Field
(GND input=H, 00h Command)
Data Field
Spare Field
1st half array 2nd half array
1st
2nd
Nth
1st half array 2nd half array
1st
2nd
Nth
Block
1st half array 2nd half array
1st
2nd
Nth
X8 device : A
4
~ A
7
Don’t care
X16 device : A
3
~ A
7
are "L"
I/Ox
On K9F5608U0B_Y,P or K9F5608U0B_V,F
CE must be held
low during tR
相關PDF資料
PDF描述
K9F5616Q0B-DIB0 MICRO D68 M/CENT50 M 2FT
K9F5616Q0B-HCB0 MICRO D68 M/CENT50 M 3FT
K9F5616Q0B-HIB0 Connector assemblies, SCSI Computer cables;
K9F5616U0B-DCB0 M1 - VGA W/USB 3 FEET
K9F5616U0B-DIB0 M1 - VGA W/USB 6 FEET
相關代理商/技術參數
參數描述
K9F5616Q0B-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0B-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0B-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0C-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory