參數(shù)資料
型號(hào)： K9F5616Q0B-DIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MICRO D68 M/CENT50 M 2FT
中文描述： 32M的× 8位，16米x 16位NAND閃存
文件頁(yè)數(shù)： 11/34頁(yè)
文件大?。?/td> 604K
代理商： K9F5616Q0B-DIB0
FLASH MEMORY
11
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
K9F56XXQ0B(1.8V)
K9F56XXU0B(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Sequential Read
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
8
15
-
10
20
mA
Program
I
CC
2
-
-
8
15
-
10
20
Erase
I
CC
3
-
-
8
15
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Input High Voltage
V
IH
I/O pins
V
CCQ
-0.4
-
V
CCQ
+0.3
2.0
-
V
CCQ
+0.3
V
Except I/O pins
V
CC
-0.4
-
V
CC
+0.3
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.4
-0.3
-
0.8
Output High Voltage Level
V
OH
K9F56XXQ0B :I
OH
=-100
μ
A
K9F56XXU0B :I
OH
=-400
μ
A
V
CC
Q-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9F56XXQ0B :I
OL
=100uA
K9F56XXU0B :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F56XXQ0B :V
OL
=0.1V
K9F56XXU0B :V
OL
=0.4V
3
4
-
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F56XXX0B-XCB0
:
T
A
=0 to 70
°
C, K9F56XXX0B-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9F56XXQ0B(1.8V)
K9F56XXU0B(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
CCQ
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9F56XXQ0B(1.8V)
K9F56XXU0B(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
V
CCQ
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9F56XXX0B-XCB0
T
BIAS
-10 to +125
°
C
K9F56XXX0B-XIB0
-40 to +125
Storage Temperature
K9F56XXX0B-XCB0
T
STG
-65 to +150
°
C
K9F56XXX0B-XIB0
Short Circuit Current
Ios
5
mA
相關(guān)PDF資料
PDF描述
K9F5616Q0B-HCB0 MICRO D68 M/CENT50 M 3FT
K9F5616Q0B-HIB0 Connector assemblies, SCSI Computer cables;
K9F5616U0B-DCB0 M1 - VGA W/USB 3 FEET
K9F5616U0B-DIB0 M1 - VGA W/USB 6 FEET
K9F5616U0B-HCB0 M1 - VGA W/USB 10 FEET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5616Q0B-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0B-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0C-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5616Q0C-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
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