參數(shù)資料
型號(hào): K9F5616Q0B-DIB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MICRO D68 M/CENT50 M 2FT
中文描述: 32M的× 8位,16米x 16位NAND閃存
文件頁數(shù): 2/34頁
文件大?。?/td> 604K
代理商: K9F5616Q0B-DIB0
FLASH MEMORY
2
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
Document Title
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.5
0.6
0.7
0.8
0.9
Remark
History
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 33)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 34)
The min. Vcc value 1.8V devices is changed.
K9F56XXQ0B : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F5608U0B-FCB0,FIB0
K9F5608Q0B-HCB0,HIB0
K9F5616U0B-HCB0,HIB0
K9F5616U0B-PCB0,PIB0
K9F5616Q0B-HCB0,HIB0
K9F5608U0B-HCB0,HIB0
K9F5608U0B-PCB0,PIB0
New definition of the number of invalid blocks is added.
(
Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb
memory space.
)
Pin assignment of TBGA A3 ball is changed.
(before) N.C --> (after) Vss
Draft Date
Nov. 22.2002
Mar. 6.2003
Mar. 13rd 2003
Apr. 4th 2003
May. 24th 2003
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
相關(guān)PDF資料
PDF描述
K9F5616Q0B-HCB0 MICRO D68 M/CENT50 M 3FT
K9F5616Q0B-HIB0 Connector assemblies, SCSI Computer cables;
K9F5616U0B-DCB0 M1 - VGA W/USB 3 FEET
K9F5616U0B-DIB0 M1 - VGA W/USB 6 FEET
K9F5616U0B-HCB0 M1 - VGA W/USB 10 FEET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5616Q0B-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0B-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0C-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5616Q0C-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata