參數(shù)資料
型號(hào)： K9F5616Q0B-HCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MICRO D68 M/CENT50 M 3FT
中文描述： 32M的× 8位，16米x 16位NAND閃存
文件頁數(shù)： 32/34頁
文件大?。?/td> 604K
代理商： K9F5616Q0B-HCB0
FLASH MEMORY
32
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
Figure 13. Read ID Operation
CE
CLE
ALE
RE
WE
90h
00h
Address. 1cycle
Maker code
Device code
t
CEA
t
AR
t
REA
READ ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Two read cycles sequentially output the manufacture code(ECh), and the device code respectively. The command register
remains in Read ID mode until further commands are issued to it. Figure 13 shows the operation sequence.
t
WHR
Figure 14. RESET Operation
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 5 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Refer to Figure 14 below.
After Power-up
After Reset
Operation Mode
Read 1
Waiting for next command
FFh
R/B
Table5. Device Status
t
RST
ECh
Device
Code*
I/Ox
I/Ox
Device
Device Code*
K9F5608Q0B
35h
K9F5608U0B
75h
K9F5616Q0B
45h
K9F5616U0B
55h
相關(guān)PDF資料
PDF描述
K9F5616Q0B-HIB0 Connector assemblies, SCSI Computer cables;
K9F5616U0B-DCB0 M1 - VGA W/USB 3 FEET
K9F5616U0B-DIB0 M1 - VGA W/USB 6 FEET
K9F5616U0B-HCB0 M1 - VGA W/USB 10 FEET
K9F5616U0B-HIB0 M1 - VGA W/USB 15 FEET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5616Q0B-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616Q0C-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5616Q0C-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616Q0C-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
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