參數(shù)資料
型號(hào)： K9F5616Q0C-HCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb/256Mb 1.8V NAND Flash Errata
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁(yè)數(shù)： 33/39頁(yè)
文件大?。?/td> 655K
代理商： K9F5616Q0C-HCB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
32
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
Block Lock mode is enabled while LOCKPRE pin state is high, which is to offer protection features for NAND Flash data. The Block
Lock mode is divided into Unlock, Lock, Lock-tight operation. Consecutive blocks protects data by allowing those blocks to be locked
or lock-tighten with no latency. This block lock scheme offers two levels of protection. The first allows software control(command input
method) of block locking that is useful for frequently changed data blocks, while the second requires hardware control(WP low pulse
input method) before locking can be changed that is useful for protecting infrequently changed code blocks.
The followings summarized the locking functionality.
- All blocks are in a locked state on power-up. Unlock sequence can unlock the locked blocks.
- The Lock-tight command locks blocks and prevents from being unlocked.
And Lock-tight state can be returned to lock state only by Hardware control(WP low pulse input).
Block Lock Mode
- Command Sequence: Lock block Command(2Ah)
- All blocks default to locked by power-up and Hardware control(WP low pulse input)
- Partial block lock is not available; Lock block operation is based on all block unit
- Unlocked blocks can be locked by using the Lock block command, and a lock block’s status can be changed to unlock or lock-tight
using the appropriate commands
1. Block lock operation
1) Lock
> In high state of LOCKPRE pin, Block lock mode and Power on Auto read are enabled, otherwise it is
regarded as NAND Flash without LOCKPRE pin.
CE
CLE
WE
2Ah
Lock Command
I/Ox
WP
相關(guān)PDF資料
PDF描述
K9F5616Q0C-HIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-DCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-DIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-HCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-HIB0 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5616Q0C-HIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0B-DCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-DIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-HCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-HIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
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