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參數(shù)資料
| 型號： | K9F5616Q0C-HIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb/256Mb 1.8V NAND Flash Errata |
| 中文描述： | 512Mb/256Mb 1.8 NAND閃存勘誤表 |
| 文件頁數(shù)： | 34/39頁 |
| 文件大小： | 655K |
| 代理商： | K9F5616Q0C-HIB0 |
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K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
33
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
- Command Sequence: Lock-tight block Command(2Ch)
- Lock-tighten blocks offer the user an additional level of write protection beyond that of a regular lock block. A block that is lock-
tighten can’t have it’s state changed by software control, only by hardware control(WP low pulse input); Unlocking multi area is not
available
- Only locked blocks can be lock-tighten by lock-tight command.
3) Lock-tight
- Command Sequence: Unlock block Command(23h) + Start block address + Command(24h) + End block address
- Unlocked blocks can be programmed or erased.
- An unlocked block’s status can be changed to the locked or lock-tighten state using the appropriate commands.
- Only one consecutive area can be released to unlock state from lock state; Unlocking multi area is not available.
- Start block address must be nearer to the logical LSB(Least Significant Bit) than End blcok address.
- One block is selected for unlocking block when Start block address is same as End block address.
2) Unlock
CE
CLE
WE
ALE
23h
Unock Command
Add.1
Start Block Address 2cycles
I/Ox
24h
Add.2
End Block Address 2 cycles
Add.1
Add.2
Unlock Command
CE
CLE
WE
2Ch
Lock-tight Command
I/Ox
WP
WP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F5616U0C-DCB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C-DIB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C-HCB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C-HIB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C-PCB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F5616U0B-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616U0B-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616U0B-HCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616U0B-HIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
| K9F5616U0B-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory |
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