參數(shù)資料
型號： K9F5616U0B-DIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： M1 - VGA W/USB 6 FEET
中文描述： 32M的× 8位，16米x 16位NAND閃存
文件頁數(shù)： 3/34頁
文件大?。?/td> 604K
代理商： K9F5616U0B-DIB0
FLASH MEMORY
3
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-VCB0,VIB0,FCB0,FIB0
GENERAL DESCRIPTION
Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0B is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V
Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be
performed in typical 200
μ
s on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in
typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all
program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the
write-intensive systems can take advantage of the K9F56XXX0B
′
s extended reliability of 100K program/erase cycles by providing
ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F56XXX0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
FEATURES
Voltage Supply
- 1.8V device(K9F56XXQ0B) : 1.70~1.95V
- 3.3V device(K9F56XXU0B) : 2.7 ~ 3.6 V
Organization
- Memory Cell Array
- X8 device(K9F5608X0B) : (32M + 1024K)bit x 8 bit
- X16 device(K9F5616X0B) : (16M + 512K)bit x 16bit
- Data Register
- X8 device(K9F5608X0B) : (512 + 16)bit x 8bit
- X16 device(K9F5616X0B) : (256 + 8)bit x16bit
Automatic Program and Erase
- Page Program
- X8 device(K9F5608X0B) : (512 + 16)Byte
- X16 device(K9F5616X0B) : (256 + 8)Word
- Block Erase :
- X8 device(K9F5608X0B) : (16K + 512)Byte
- X16 device(K9F5616X0B) : ( 8K + 256)Word
Page Read Operation
- Page Size
- X8 device(K9F5608X0B) : (512 + 16)Byte
- X16 device(K9F5616X0B) : (256 + 8)Word
- Random Access : 10
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
Fast Write Cycle Time
- Program time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
- K9F56XXU0B-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F56XXX0B-DCB0/DIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- K9F5608U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F56XXU0B-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F56XXX0B-HCB0/HIB0
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F5608U0B-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F5608U0B-V,F(WSOPI ) is the same device as
K9F5608U0B-Y,P(TSOP1) except package type.
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9F5608Q0B-D,H
1.70 ~ 1.95V
X8
TBGA
K9F5616Q0B-D,H
X16
K9F5608U0B-Y,P
2.7 ~ 3.6V
X8
TSOP1
K9F5608U0B-D,H
TBGA
K9F5608U0B-V,F
WSOP1
K9F5616U0B-Y,P
X16
TSOP1
K9F5616U0B-D,H
TBGA
相關(guān)PDF資料
PDF描述
K9F5616U0B-HCB0 M1 - VGA W/USB 10 FEET
K9F5616U0B-HIB0 M1 - VGA W/USB 15 FEET
K9F5616U0B-PCB0 M1 - DVI-D 3 FEET
K9F5616U0B-PIB0 M1 - DVI-D 6 FEET
K9F5616U0B-YCB0 M1 - DVI-D 10 FEET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5616U0B-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0B-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
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