參數(shù)資料
型號： K9F5616U0C-DCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb/256Mb 1.8V NAND Flash Errata
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁數(shù)： 38/39頁
文件大小： 655K
代理商： K9F5616U0C-DCB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
37
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B)
and current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can
be determined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp
t
I
Rp(ohm)
Fig 17 Rp vs tr ,tf & Rp vs ibusy
Ibusy
tr
ibusy
Busy
Ready Vcc
@ Vcc = 3.3V, Ta = 25
°
C , C
L
= 100pF
VOH
tf
tr
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
100
tf
200
300
400
3.6
3.6
3.6
3.6
2.4
1.2
0.8
0.6
VOL
Rp(min, 1.8V part) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
1.85V
3mA
+
Σ
I
L
where I
L
is the sum of the input currents of all devices tied to the R/B pin.
Rp value guidance
Rp(max) is determined by maximum permissible limit of tr
Rp(min, 3.3V part) =
V
CC
(Max.) - V
OL
(Max.)
I
OL
+
Σ
I
L
=
3.2V
8mA
+
Σ
I
L
1.8V device - V
OL
: 0.1V, V
OH
: V
CC
q-0.1V
3.3V device - V
OL
: 0.4V, V
OH
: 2.4V
t
I
Rp(ohm)
Ibusy
tr
@ Vcc = 1.8V, Ta = 25
°
C , C
L
= 30pF
1K
2K
3K
4K
100n
200n
300n
3m
2m
1m
30
tf
60
90
120
1.7
1.7
1.7
1.7
1.7
0.85
0.57
0.43
C
L
相關(guān)PDF資料
PDF描述
K9F5616U0C-DIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-HCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-HIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-PCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-PIB0 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5616U0C-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-HCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-HIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
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