參數(shù)資料
型號(hào)： K9F5616U0C-PCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb/256Mb 1.8V NAND Flash Errata
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁(yè)數(shù)： 2/39頁(yè)
文件大?。?/td> 655K
代理商： K9F5616U0C-PCB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
1
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
Document Title
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
1.0
2.0
2.1
2.2
2.3
2.4
Remark
Advance
Preliminary
Preliminary
Preliminary
History
Initial issue.
1.Pin assignment of TBGA dummy ball is changed.
(before) DNU --> (after) N.C
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)
3. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 37)
4. Add the specification of Block Lock scheme.(Page 32~35)
5. Pin assignment of TBGA A3 ball is changed.
(before) N.C --> (after) Vss
6. Pin assignment of WSOP #38 pin is changed.
(before) LOCKPRE --> (after) N.C
1. The Maximum operating current is changed.
Program : Icc2 20mA-->25mA
Erase : Icc3 20mA-->25mA
The min. Vcc value 1.8V devices is changed.
K9F56XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F5608U0C-FCB0,FIB0
K9F5608Q0C-HCB0,HIB0
K9F5616U0C-HCB0,HIB0
K9F5616U0C-PCB0,PIB0
K9F5616Q0C-HCB0,HIB0
K9F5608U0C-HCB0,HIB0
K9F5608U0C-PCB0,PIB0
Errata is added.(Front Page)-K9F56XXQ0C
tWC tWH tWP tRC tREH tRP tREA tCEA
Specification 45 15 25 50 15 25 30 45
Relaxed value 60 20 40 60 20 40 40 55
New definition of the number of invalid blocks is added.
(
Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb
memory space.
)
Draft Date
Apr. 25th 2002
Dec.14th 2002
Jan. 17th 2003
Mar. 5th 2003
Mar. 13rd 2003
Mar. 26th 2003
Apr. 4th 2003
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
相關(guān)PDF資料
PDF描述
K9F5616U0C-PIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-YCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-YIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F1208Q0A Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F5608U0M-YCB0 32M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5616U0C-PCB0000 制造商:Samsung Semiconductor 功能描述:
K9F5616U0C-PIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-Y 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0C-YCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-YIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
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