參數(shù)資料
型號(hào)： K9F5616U0C-PIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb/256Mb 1.8V NAND Flash Errata
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁(yè)數(shù)： 11/39頁(yè)
文件大?。?/td> 655K
代理商： K9F5616U0C-PIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
10
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
K9F56XXQ0C(1.8V)
K9F56XXU0C(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Sequential Read
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
8
15
-
10
20
mA
Program
I
CC
2
-
-
8
15
-
10
25
Erase
I
CC
3
-
-
8
15
-
10
25
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
-
-
±
10
Input High Voltage
V
IH
I/O pins
V
CCQ
-0.4
-
V
CCQ
+0.3
2.0
-
V
CCQ
+0.3
V
Except I/O pins
V
CC
-0.4
-
V
CC
+0.3
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.4
-0.3
-
0.8
Output High Voltage Level
V
OH
K9F56XXQ0C :I
OH
=-100
μ
A
K9F56XXU0C :I
OH
=-400
μ
A
V
CC
Q-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9F56XXQ0C :I
OL
=100uA
K9F56XXU0C :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F56XXQ0C :V
OL
=0.1V
K9F56XXU0C :V
OL
=0.4V
3
4
-
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F56XXX0C-XCB0
:
T
A
=0 to 70
°
C, K9F56XXX0C-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9F56XXQ0C(1.8V)
K9F56XXU0C(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
CCQ
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9F56XXQ0C(1.8V)
K9F56XXU0C(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
V
CCQ
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9F56XXX0C-XCB0
T
BIAS
-10 to +125
°
C
K9F56XXX0C-XIB0
-40 to +125
Storage Temperature
K9F56XXX0C-XCB0
T
STG
-65 to +150
°
C
K9F56XXX0C-XIB0
Short Circuit Current
Ios
5
mA
相關(guān)PDF資料
PDF描述
K9F5616U0C-YCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-YIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F1208Q0A Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F5608U0M-YCB0 32M x 8 Bit NAND Flash Memory
K9F5608U0M-YIB0 32M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5616U0C-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0C-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F56XXQ0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F6408Q0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory
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