參數(shù)資料
型號(hào)： K9F5616U0C-PIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512Mb/256Mb 1.8V NAND Flash Errata
中文描述： 512Mb/256Mb 1.8 NAND閃存勘誤表
文件頁(yè)數(shù)： 12/39頁(yè)
文件大?。?/td> 655K
代理商： K9F5616U0C-PIB0
K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
11
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
VALID BLOCK
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
CAPACITANCE
(
T
A
=25
°
C, V
CC
=1.8V/3.3V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
NOTE
:
1. The
K9F56XXX0C
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
.
Do not erase
or program factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction.
3.
Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
2013
-
2048
Blocks
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
200
500
μ
s
μ
s
Dummy Busy Time for the Lock or Lock-tight Block
t
LBSY
-
5
10
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
2
cycles
Spare Array
-
-
3
cycles
Block Erase Time
t
BERS
-
2
3
ms
AC TEST CONDITION
(K9F56XXX0C-XCB0 :TA=0 to 70
°
C, K9F56XXX0C-XIB0:TA=-40 to 85
°
C
K9F56XXQ0C : Vcc=1.70V~1.95V , K9F56XXU0C : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F56XXQ0C
K9F56XXU0C
Input Pulse Levels
0V to VccQ
0.4V to 2.4V
Input Rise and Fall Times
5ns
5ns
Input and Output Timing Levels
VccQ/2
1.5V
K9F56XXQ0C:Output Load (VccQ:1.8V +/-10%)
K9F56XXU0C:Output Load (VccQ:3.0V +/-10%)
1 TTL GATE and CL=30pF
1 TTL GATE and CL=50pF
K9F56XXU0C:Output Load (VccQ:3.3V +/-10%)
-
1 TTL GATE and CL=100pF
NOTE
: 1. X can be V
IL
or V
IH.
2. WP should be biased to CMOS high or CMOS low for standby.
CLE
ALE
CE
WE
RE
PRE
WP
Mode
H
L
L
H
X
X
Read Mode
Command Input
L
H
L
H
X
X
Address Input(3clock)
H
L
L
H
X
H
Write Mode
Command Input
L
H
L
H
X
H
Address Input(3clock)
L
L
L
H
X
H
Data Input
L
L
L
H
X
X
Data Output
X
X
X
X
H
X
X
During Read(Busy) on K9F5608U0C_Y,P or K9F5608U0C_V,F
L
L
L
H
H
X
X
During Read(Busy) on the devices except K9F5608U0C_Y,P and
K9F5608U0C_V,F
X
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
0V/V
CC
(2)
Stand-by
相關(guān)PDF資料
PDF描述
K9F5616U0C-YCB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-YIB0 512Mb/256Mb 1.8V NAND Flash Errata
K9F1208Q0A Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F5608U0M-YCB0 32M x 8 Bit NAND Flash Memory
K9F5608U0M-YIB0 32M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F5616U0C-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5616U0C-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F5616U0C-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
K9F56XXQ0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F6408Q0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit Bit NAND Flash Memory
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