參數資料
型號: KA3S0680RF
廠商: Fairchild Semiconductor Corporation
英文描述: Fairchild Power Switch(FPS)
中文描述: 飛兆半導體功率開關(FPS)
文件頁數: 3/12頁
文件大?。?/td> 143K
代理商: KA3S0680RF
KA3S0680RB/KA3S0680RFB
3
Electrical Characteristics (SFET part)
(Ta =
25
°
C unless otherwise specified)
Note:
Pulse test: Pulse width
300
μ
S, duty cycle
2%
1
R
Characteristic
Symbol
BV
DSS
Test condition
V
GS
= 0V, I
D
= 50
μ
A
V
DS
= Max., Rating,
V
GS
= 0V
V
DS
= 0.8Max., Rating,
V
GS
= 0V, T
C
= 125
°
C
V
GS
= 10V, I
D
= 4.0A
V
DS
= 15V, I
D
= 4.0A
Min.
800
Typ.
-
Max.
-
Unit
V
Drain source breakdown voltage
Zero gate voltage drain current
I
DSS
-
-
50
μ
A
-
-
200
mA
Static drain source on resistance
(note)
Forward transconductance
(note)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
R
DS(ON)
gfs
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
tf
-
1.6
2.5
1600
140
42
60
150
300
2.0
-
-
-
-
-
-
-
W
S
1.5
-
-
-
-
-
-
V
GS
= 0V, V
DS
= 25V,
f = 1MHz
pF
V
DD
= 0.5BV
DSS
, I
D
= 6.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
= 6.0A,
V
DS
= 0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
nS
Fall time
-
130
-
Total gate charge
(gate-source+gate-drain)
Gate source charge
Qg
-
70
-
nC
Qgs
-
16
-
Gate drain (Miller) charge
Qgd
-
27
-
S
---
=
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相關代理商/技術參數
參數描述
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