參數(shù)資料
型號: KBE00G003M-D411
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: NAND 512Mb*2 + Mobile SDRAM 256Mb*2
中文描述: NAND閃存的512Mb * 2移動(dòng)SDRAM 256Mb的* 2
文件頁數(shù): 76/89頁
文件大?。?/td> 1238K
代理商: KBE00G003M-D411
KBE00G003M-D411
MCP MEMORY
July 2005
76
Revision 0.1
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CKE
CS
RAS
CAS
BA1
A10/AP
CL=3
ADDR
WE
: Don’t care
CLOCK
Page Read Cycle at Different Bank @Burst Length=4
HIGH
RAa
CAa
RAa
CL=2
{
Row Active
(A-Bank)
Read
(A-Bank)
Precharge
(D-Bank)
*NOTE:
1. CS can be don't cared when RAS, CAS and WE are high at the clock high going dege.
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
BA0
DQM
DQ
*Note 2
RCc
Read
(B-Bank)
CBb
RDd
CCc
CDd
RBb
RCc
RDd
QAa1 QAa2 QBb0 QBb1 QBb2 QCc0 QCc1 QCc2 QDd0 QDd1 QDd2
QAa1 QAa2 QBb0 QBb1 QBb2 QCc0 QCc1 QCc2 QDd0 QDd1 QDd2
Row Active
(B-Bank)
Row Active
(C-Bank)
Row Active
(D-Bank)
Precharge
(A-Bank)
Read
(C-Bank)
Precharge
(B-Bank)
Read
(D-Bank)
Precharge
(C-Bank)
*Note 1
QAa0
QAa0
RBb
相關(guān)PDF資料
PDF描述
KBE00S009M 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBE00S009M-D411 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBJ2501 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2502 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2503 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
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KBE00S003M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S003M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND*2 + 256Mb Mobile SDRAM*2
KBE00S009M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
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