參數(shù)資料
型號: KBE00S009M-D411
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
中文描述: 1Gb的NAND × 2 256Mb的移動SDRAM × 2
文件頁數(shù): 5/86頁
文件大?。?/td> 1898K
代理商: KBE00S009M-D411
MCP MEMORY
5
KBE00S009M-D411
Revision 1.0
May 2005
NOTE :
1. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose,
such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
ORDERING INFORMATION
Samsung
MCP Memory(4chips)
Device Type
NAND + NAND + SDRAM+SDRAM
NOR Flash Density, Voltage,
Organization, Bank Size, Boot Block
00 = None
Access Time
411 : NAND Flash 50ns
NAND Flash 50ns
Mobile SDRAM 9ns
Mobile SDRAM 9ns
SDRAM Interface, Density,
Voltage, Organization, Option
9
= M-SDR, 256M+256M, 1.8V/1.8V, x32
U
t
RAM Density, Voltage, Organization
0 = None
Package
D = FBGA(Lead-Free)
NAND Flash Density, Voltage, Organization
S = 1G+1G, 2.7V/2.7V, x8
SRAM Density, Voltage, Organization
0 = None
KB E 00 S 0 0 9 M - D 411
Version
M = 1st Generation
PIN DESCRIPTION
Pin Name
Pin Function(Mobile SDRAM)
CLK
System Clock
CKE
Clock Enable
CS
Chip Select
RAS
Row Address Strobe
CAS
Column Address Strobe
WEd
Write Enable
A0 ~ A12
Address Input
BA0 ~ BA1
Bank Address Input
DQM0 ~ DQM3
Input/Output Data Mask
DQ0 ~ DQ31
Data Input/Output
Vdd
Power Supply
Vddq
Data Out Power
Vss
Ground
Vssq
DQ Ground
Pin Name
Pin Function(NAND Flash)
CE
Chip Enable
RE
Read Enable
WP
Write Protection
WEn
Write Enable
ALE
Address Latch Enable
CLE
Command Latch Enable
R/B
Ready/Busy Output
IO0 ~ IO7
Data Input/Output
Vcc
Power Supply
Vss
Ground
Pin Name
Pin Function
NC
No Connection
DNU
Do Not Use
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