參數(shù)資料
型號(hào): KBE00S009M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
中文描述: 1Gb的NAND × 2 256Mb的移動(dòng)SDRAM × 2
文件頁(yè)數(shù): 62/86頁(yè)
文件大?。?/td> 1898K
代理商: KBE00S009M
MCP MEMORY
62
KBE00S009M-D411
Revision 1.0
May 2005
*NOTE:
1. SAMSUNG can support tRDL=2CLK.
2. tBDL : 1 CLK ; Last data in to burst stop delay.
Read or write burst stop command is valid at every burst length.
3. Number of valid output data after row precharge or burst stop : 1, 2 for CAS latency= 2, 3 respectively.
4. PRE : All banks precharge is necessary.
MRS can be issued only at all banks precharge state.
1
2
1
2
*4
tRP
2CLK
tRDL
*1
tBDL
*2
8. Burst Stop & Interrupted by Precharge
9. MRS
1) Normal Write
BL=4 & tRDL=2CLK
D
0
D
1
D
2
2) Write Burst Stop (BL=8)
CMD
DQ
CLK
DQM
WR
PRE
CLK
CMD
DQM
DQ
WR
STOP
D
0
D
1
D
2
D
3
3) Read Interrupted by Precharge (BL=4)
CLK
CMD
DQ(CL2)
DQ(CL3)
RD
PRE
Q
0
Q
1
Q
0
Q
1
4) Read Burst Stop (BL=4)
CLK
CMD
DQ(CL2)
DQ(CL3)
RD
STOP
Q
0
Q
1
Q
0
Q
1
1) Mode Register Set
CLK
CMD
PRE
MRS
ACT
相關(guān)PDF資料
PDF描述
KBE00S009M-D411 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KBJ2501 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2502 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2503 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
KBJ2504 25A SINGLE PHASE SILICON BRIDGE RECTIFIER
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