參數(shù)資料
型號： KBE00S009M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
中文描述： 1Gb的NAND × 2 256Mb的移動SDRAM × 2
文件頁數(shù)： 65/86頁
文件大?。?/td> 1898K
代理商： KBE00S009M
MCP MEMORY
65
KBE00S009M-D411
Revision 1.0
May 2005
FUNCTION TRUTH TABLE (TABLE 1)
Current
State
CS
RAS
CAS
WE
BA
Address
Action
Note
IDLE
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
H
L
L
L
L
L
X
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
L
L
X
H
H
H
L
L
X
H
H
L
H
H
L
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
H
L
X
H
H
L
H
L
X
H
L
X
H
L
H
L
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
X
X
X
X
H
L
X
X
X
X
X
X
X
X
X
NOP
NOP
ILLEGAL
2
2
BA
BA
BA
X
CA, A
10
/AP ILLEGAL
RA
A
10
/AP
X
OP code
X
X
X
CA, A
10
/AP Begin Read ; latch CA ; determine AP
CA, A
10
/AP Begin Read ; latch CA ; determine AP
RA
ILLEGAL
A
10
/AP
Precharge
X
ILLEGAL
X
NOP (Continue Burst to End --> Row Active)
X
NOP (Continue Burst to End --> Row Active)
X
Term burst --> Row active
CA, A
10
/AP Term burst, New Read, Determine AP
CA, A
10
/AP Term burst, New Write, Determine AP
RA
ILLEGAL
A
10
/AP
Term burst, Precharge timing for Reads
X
ILLEGAL
X
NOP (Continue Burst to End --> Row Active)
X
NOP (Continue Burst to End --> Row Active)
X
Term burst --> Row active
CA, A
10
/AP Term burst, New read, Determine AP
CA, A
10
/AP Term burst, New Write, Determine AP
RA
ILLEGAL
A
10
/AP
Term burst, precharge timing for Writes
X
ILLEGAL
X
NOP (Continue Burst to End --> Precharge)
X
NOP (Continue Burst to End --> Precharge)
X
ILLEGAL
CA, A
10
/AP ILLEGAL
RA, RA
10
ILLEGAL
X
ILLEGAL
X
NOP (Continue Burst to End --> Precharge)
X
NOP (Continue Burst to End --> Precharge)
X
ILLEGAL
CA, A
10
/AP ILLEGAL
RA, RA
10
ILLEGAL
X
ILLEGAL
Row (& Bank) Active ; Latch RA
NOP
Auto Refresh or Self Refresh
Mode Register Access
NOP
NOP
ILLEGAL
4
5
5
OP code
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
X
X
X
X
BA
BA
X
Row
Active
2
2
Read
3
2
Write
3
3
2
3
Read with
Auto
Precharge
2
Write with
Auto
Precharge
2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KBE00S009M-D411 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb NAND x 2 + 256Mb Mobile SDRAM x 2
KB-E100SRW 功能描述:LED 顯示器和配件 Red 640nm 90mcd Diffused Light Bar RoHS:否 制造商:Avago Technologies 顯示器類型:7 Segment 數(shù)位數(shù)量:2 字符大小:7.8 mm x 14.22 mm 照明顏色:Red 波長:628 nm 共用管腳:Common Anode 工作電壓:2.05 V 工作電流:20 mA 最大工作溫度:+ 85 C 最小工作溫度:- 35 C 封裝:Tube
KB-E100SURKW 功能描述:LED條和陣列 8.89X3.81MM RED LT BAR LED DISPLAY RoHS:否 制造商:Avago Technologies 產(chǎn)品:LED Light Bars 照明顏色:Red 光強(qiáng)度:45 mcd 封裝:Tube
KBE1A11N 制造商:Lovato Electric Inc 功能描述:
KBEV 5T-0.5-RSSV 4.5T 制造商:TURCK Inc 功能描述:KBEV 5T-0.5-RSSV 4.5T
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