參數(shù)資料
型號: KDS120V
廠商: KEC Holdings
英文描述: SILICON EPITAXIAL TYPE DIODE
中文描述: 硅外延型二極管
文件頁數(shù): 1/1頁
文件大?。?/td> 68K
代理商: KDS120V
2001. 7. 24
1/1
SEMICONDUCTOR
TECHNICAL DATA
KDS120V
SILICON EPITAXIAL TYPE DIODE
Revision No : 0
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Very Small Package : VSM.
Low Forward Voltage : V
F
=0.92V (Typ.).
Fast Reverse Recovery Time : t
rr
=1.6ns(Typ.).
Small Total Capacitance : C
T
=2.2pF (Typ.).
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
MILLIMETERS
1.2 0.05
0.8 0.05
0.5 0.05
0.3 0.05
1.2 0.05
0.8 0.05
0.40
0.12 0.05
0.2 0.05
5
D
E
G
H
J
K
P
VSM
B
E
D
G
A
H
K
C
J
2
3
1
P
P
1. CATHODE 1
2. CATHODE 2
3. ANODE
+
+
+
+
+
+
+
+
3
2
1
ELECTRICAL CHARACTERISTICS (Ta=25
)
Marking
A 3
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
85
V
Reverse Voltage
V
R
80
V
Maximum (Peak) Forward Current
I
FM
300 *
mA
Average Forward Current
I
O
100 *
mA
Surge Current (10ms)
I
FSM
2 *
A
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.61
-
V
V
F(2)
I
F
=10mA
-
0.74
-
V
F(3)
I
F
=100mA
-
0.92
1.20
Reverse Current
I
R
V
R
=80V
-
-
0.5
A
Total Capacitance
C
T
V
R
=0, f=1MHz
-
2.2
4.0
pF
Reverse Recovery Time
t
rr
I
F
=10mA
-
1.6
4.0
nS
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
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