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參數(shù)資料
| 型號(hào)： | KDS160E |
| 廠商： | KEC Holdings |
| 英文描述： | SILICON EPITAXIAL PLANAR DIODE |
| 中文描述： | 硅平面二極管外延 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 82K |
| 代理商： | KDS160E |
2001. 12. 13
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS160E
SILICON EPITAXIAL PLANAR DIODE
Revision No : 3
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : ESC.
Low Forward Voltage.
Fast Reverse Recovery Time.
Small Total capacitance.
MAXIMUM RATING (Ta=25
)
ESC
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 0.10
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
0.13+
C
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
+
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
Type Name
Marking
F
U
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
85
V
Reverse Voltage
V
R
80
V
Maximum (Peak) Forward Current
I
FM
300
mA
Average Forward Current
I
O
100
mA
Surge Current (10mS)
I
FSM
2
A
Power Dissipation
P
D
-
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F(1)
I
F
=1mA
-
0.60
-
V
V
F(2)
I
F
=10mA
-
0.72
-
V
F(3)
I
F
=100mA
-
0.90
1.20
Reverse Current
I
R
V
R
=80V
-
-
0.5
A
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
0.9
3.0
pF
Reverse Recovery Time
t
rr
I
F
=10mA
-
1.6
4.0
nS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KDS160 | SILICON EPITAXIAL PLANAR TYPE DIODE (ULTRA HIGH SPEED SWITCHING) |
| KDS181 | SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING) |
| KDS184 | SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING) |
| KDS190 | SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KDS160E_03 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| KDS160E_05 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:ESC PACKAGE |
| KDS160F | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TFSC PACKAGE |
| KDS160V | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:VSC PACKAGE |
| KDS16112BT | 制造商:Apex Tool Group 功能描述:16 GAUGE X 1 1/2 IN. THREADED HUB DISPENSING NEEDLE |
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