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參數(shù)資料
| 型號： | KDV257E |
| 廠商： | KEC Holdings |
| 英文描述： | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND) |
| 中文描述： | 變容二極管外延硅平面二極管（振蕩器的超高頻/甚高頻波段） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 63K |
| 代理商： | KDV257E |
2001. 6. 11
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV257E
Revision No : 0
VCO FOR UHF/VHF BAND.
FEATURES
Low Series Resistance : r
s
=0.50
(Max.)
MAXIMUM RATING (Ta=25
)
ESC
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 0.10
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
0.13 0.05
+
C
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
+
+
+
+
+
ELECTRICAL CHARACTERISTICS (Ta=25
)
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Type Name
Marking
A
E
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
10
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=1
A
10
-
-
V
Reverse Current
I
R
V
R
=10V
-
-
10
nA
Capacitance
C
1V
V
R
=1V, f=1MHz
19.5
-
23.5
pF
C
2V
V
R
=2V, f=1MHz
14.3
-
17.6
Capacitance Ratio
K
-
1.3
-
-
Series Resistance
r
S
V
R
=1V, f=470MHz
-
-
0.5
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PDF描述 |
|---|---|
| KDV258 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND) |
| KDV262E | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| KDV258 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND) |
| KDV258E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| KDV262 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING) |
| KDV262_03 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON EPITAXIAL PLANAR DIODE |
| KDV262E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING) |
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