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參數(shù)資料
| 型號(hào)： | K7A323600M-QC14 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 1Mx36 & 2Mx18 Synchronous SRAM |
| 中文描述： | 1Mx36 |
| 文件頁(yè)數(shù)： | 1/18頁(yè) |
| 文件大?。?/td> | 247K |
| 代理商： | K7A323600M-QC14 |
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1Mx36 & 2Mx18 Synchronous SRAM
- 1 -
Rev 2.0
Nov. 2003
K7A321800M
K7A323600M
Document Title
1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
1.0
1.1
1.2
2.0
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Final
Final
History
1. Initial draft
1. Add 165FBGA package
1. Update JTAG scan order
2. Speed bin merge.
From K7A3236(18)09M to K7A3236(18)00M.
3. AC parameter change.
tOH(min)/tHZC(min) from 0.8 to 1.5 at -25
tOH(min)/tHZC(min) from 1.0 to 1.5 at -22
tOH(min)/tHZC(min) from 1.0 to 1.5 at -20
1. Change pin out for 165FBGA
- x18/x36 ; 11B => from A to NC , 2R ==> from NC to A .
1. Insert pin at JTAG scan order of 165FBGA in connection with pin out change
- x18/x36 ; insert Pin ID of 2R to BIT number of 69
1. Add Icc, Isb,Isb1 and Isb2 values
1. Correct the pin name of 100TQFP.
1. Add the Industrial temperature range.
1. Change the Stand-by current (Isb)
Before After
Isb - 25 : 120 170
- 22 : 110 160
- 20 : 100 150
- 16 : 90 140
- 15 : 90 140
- 14 : 90 140
Isb1 : 90 110
Isb2 : 80 100
1. Delete the 119BGA and 165FBGA package.
2. Delete the 225MHz, 167MHz and 150MHz speed bin
Draft Date
May. 10. 2001
Aug. 29. 2001
Dec. 31. 2001
Feb. 14. 2002
Apr. 20. 2002
May.10. 2002
Oct. 15. 2002
Mar. 19, 2003
Oct. 17, 2003
Nov. 18, 2003
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