參數(shù)資料
型號(hào)： KFG5616Q1
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND256
中文描述： OneNAND256
文件頁數(shù)： 60/93頁
文件大小： 1223K
代理商： KFG5616Q1
OneNAND256
FLASH MEMORY
60
8.10.3 OTP Lock(OTP Access+Lock OTP)
OTP area could be locked by programming XXXCh to 8th word in sector0 of page0 to prevent the program operation. At the device
power-up, the device automatically checks this word and updates OTP
L
bit of Controller Status register as "1"(lock). If the program
operation happens in OTP locked status, the device updates Error bit of Controller Status register as "1"(fail).
Start
Write ’FPA, FSA’ of Flash
Add: F107h DQ=0000h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=0001h
Write Data into DataRAM
2)
Add: 8th Word
in spare0/sector0/page0
Write Program command
DQ=0080h or 001Ah
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Add: F220h
Write 0 to interrupt register
Add: F241h DQ=0000h
Automatically
updated
DQ=XXXCh
Figure 23. OTP lock operation flow-chart
Update Controller
Status Register
Add: F240h
DQ[6]=1(OTP
L
)
OTP lock completed
Write ’FBA’ of Flash
Add: F100h DQ=FBA
3)
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write 0 to interrupt register
Add: F241h DQ=0000h
Do Cold reset
Write ’FBA’ of Flash
1)
Add: F100h DQ=FBA
Note 1) FBA(NAND Flash Block Address) could be omitted or any address.
2) Data input could be done anywhere between "Start" and "Write Program Command".
3) FBA should point the unlocked area address among NADND Flash Array address map.
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