- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374332 > KFG5616Q1M-DEB (SAMSUNG SEMICONDUCTOR CO. LTD.) OneNAND256 PDF資料下載
參數(shù)資料
| 型號(hào)： | KFG5616Q1M-DEB |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | OneNAND256 |
| 中文描述： | OneNAND256 |
| 文件頁(yè)數(shù)： | 54/93頁(yè) |
| 文件大?。?/td> | 1223K |
| 代理商： | KFG5616Q1M-DEB |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)當(dāng)前第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)
OneNAND256
FLASH MEMORY
54
8.9 Erase Operation
The device can be erased in block unit. To erase a block is to write 1
′
s into the desired memory block by executing the Internal Erase
Routine. In order to perform the Internal Erase Routine, command sequence is necessary. First, host sets the block address of the
memory location. Second, erase command initiates the internal erase routine. During the execution of the Routine, the host is not
required to provide further controls or timings.
During the Internal erase routine, commands except reset and erase suspend command written to the device will be ignored.
Note that a reset during a erase operation will cause data corruption at the corresponding location.
Figure 17. Erase operation flow-chart
Start
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write ’Erase’ Command
Add: F220h DQ=0094h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
Add: F240h DQ[10]=Error
Erase completed
DQ[10]=0
YES
Erase Error
NO
Read Controller
Status Register
Write 0 to interrupt register
Add: F241h DQ=0000h
: If erase operation results in an error, map out
*
the failing block.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| KFG5616U1M-DIB | OneNAND256 |
| KFM110 | SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR THR IF CIRCUITS OF CORDLESS PHONE) |
| KFM1216Q2M | FLASH MEMORY |
| KFM1216Q2M-DEB | FLASH MEMORY |
| KFM1216Q2M-DED | FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFG5616U1A-DIB | 制造商:Samsung Semiconductor 功能描述: |
| KFG5616U1A-DIB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND Specification FLASH MEMORY |
| KFG5616U1A-DIB5000 | 制造商:Samsung Semiconductor 功能描述:256MNOFLASHADE-MUXED SLC W/X16(7X9) - Bulk |
| KFG5616U1A-DIB6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND Specification FLASH MEMORY |
| KFG5616U1A-PIB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:OneNAND Specification FLASH MEMORY |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。