參數(shù)資料
型號: KFG5616Q1M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: OneNAND256
中文描述: OneNAND256
文件頁數(shù): 29/93頁
文件大?。?/td> 1223K
代理商: KFG5616Q1M
OneNAND256
FLASH MEMORY
29
7.8 Start Address1 Register (R/W): F100h, default=0000h
FBA
(NAND Flash Block Address): NAND Flash block address which will be read or programmed or erased.
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000000)
FBA
7.9 Start Address2 Register (R/W): F101h, default=0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000000000000000)
7.10 Start Address3 Register (R/W): F102h, default=0000h
FCBA
(NAND Flash Copy Back Block Address): NAND Flash destination block address which will be copy back programmed.
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000000)
FCBA
7.11 Start Address4 Register (R/W): F103h, default=0000h
FCPA
(NAND Flash Copy Back Page Address): NAND Flash destination page address in a block for copy back program operation.
FCPA(default value) = 000000
FCPA range : 000000~111111, 6bits for 64 pages
FCSA
(NAND Flash Copy Back Sector Address): NAND Flash destination sector address in a page for copy back program operation.
FCSA(default value) = 0
FCSA range : 0~1, 1bits for 2 sectors
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(00000000)
FCPA
Reserved FCSA
Device
Number of Block
FBA
256Mb
512
FBA[8:0]
Device
Number of Block
FBA
256Mb
512
FBA[8:0]
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