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參數(shù)資料
| 型號： | KFG5616U1M-DIB |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | OneNAND256 |
| 中文描述： | OneNAND256 |
| 文件頁數(shù)： | 3/93頁 |
| 文件大?。?/td> | 1223K |
| 代理商： | KFG5616U1M-DIB |
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OneNAND256
FLASH MEMORY
3
Document Title
OneNAND
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
0.5
0.6
0.7
0.8
1.0
1.1
Remark
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Draft Date
Jan. 6, 2004
Mar. 24, 2004
May. 7, 2004
July. 6, 2004
August. 6, 2004
October. 21, 2004
December. 17, 2004
History
Initial issue.
1. Modified to preliminary specification.
2. Add the cache read operation and DQ toggling scheme.
1. Corrected the errata
2. ECC description is revised.
3. Changed Read while Load and Write While Program diagram.
4. Revised OTP Flow Chart
5. Added Multi Block Erase operation cases
6. Added Spare Assignment information
7. Added NAND Array Memory Map
8. Added OTP load/program/lock operation description
9. Revised OTP load/program/lock flow chart ; Excluded the fail case
10. Added Spare Assignment information
11. Added OTP Erase Fail case in Controller Status register output table
12. Added DC/AC parameters
13. Revised OTP area assignment
14. Added INT guidance
15. 2.65V device is added.
1. Corrected the errata
2. Changed Manufacturer ID from 0001h to 00ECh
3. Deleted BootRAM unlock/lock command
4. Revised 1.8V/2.65V/3.3V DC parameters
5. Revised tCES from 9ns to 7ns
6. Write Protection status register description is revised
1. Corrected the errata
2. Moved Interrupt register setting before inputting command in all flow
charts
3. Revised Dual operation diagrams
4. Added and revised the asynchronous read operation timing diagram
5. Revised the asynchronous write operation timing diagram
6. Added the tREADY parameter in Hot Reset operation
7. Revised typical tRD2 from 75us to 50us
8. Revised max tRD2 from 100us to 75us
9. Revised Write Protection status description
1. Revised Cold Reset and Warm Reset diagram
2. Added TSOP1 Package Information
3. Revised typical tOTP, tLOCK from 300us to 600us
4. Revised max tOTP, tLOCK from 600us to 1000us
5. Deleted Lock/Lock-tight All Block Operation
6. Added Endurance and Data Retention
Deleted Confidential Mark
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