參數(shù)資料
型號(hào)： KFG5616U1M-DIB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND256
中文描述： OneNAND256
文件頁數(shù)： 89/93頁
文件大?。?/td> 1223K
代理商： KFG5616U1M-DIB
OneNAND256
FLASH MEMORY
89
NOTES:
1. AA = Address of address register
CA = Address of command register
PCD = Program Command
PMA = Address of memory to be programmed
BA = Address of BufferRAM to load the data
BD = Program Data
SA = Address of status register
2. “In progress” and “complete” refer to status register
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
Program Command Sequence (last two cycles)
A0:A15
WE
CE
CLK
t
DS
t
DH
t
CH
t
WPL
t
CS
t
WPH
t
WC
SA
SA
ProIn
Complete
AA
DQ0-DQ15
OE
Read Status Data
Figure 39. Program Operation Timing
SWITCHING WAVEFORMS
V
IL
Program Operations
≈
≈
≈
≈
AVD
BA
CA
PCD
PMA
BD
t
AAVDH
t
AAVDS
t
PGM
INT
t
AVDP
t
VLWH
t
WEA
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