參數(shù)資料
型號(hào)： KFM1216Q2M-DEB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁(yè)數(shù)： 60/88頁(yè)
文件大小： 1150K
代理商： KFM1216Q2M-DEB
MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
60
Figure 19. OTP Load operation flow-chart
Note 1) FBA(NAND Flash Block Address) could be omitted or any address.
8.10.1 OTP Load(OTP Access+Load NAND)
OTP area is separated from NAND Flash Array, so it is accessed by OTP Access command instead of FBA. The content of OTP
could be loaded with the same sequence as normal load operation after being accessed by the command. If user wants to exit from
OTP access mode, Cold, Warm, Hot or NAND Flash Core Reset operation should be done.
* DBS, DFS is for DDP
Start
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write ’FPA, FSA’ of Flash
1)
Add: F107h DQ=FPA, FSA
OTP Load completed
Write ’Load’ Command
Add: F220h
DQ=0000h or 0013h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write ’OTP Access’ Command
Add: F220h DQ=0075h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
OTP Exit
Host reads data from
DataRAM
Do Cold/Warm/Hot
/NAND Flash Core Reset
Write ’DFS*, FBA’ of Flash
1)
Add: F100h DQ=DFS*’, FBA
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Select DataRAM for DDP
Add: F101h DQ=DBS
Write 0 to interrupt register
Add: F241h DQ=0000h
Write 0 to interrupt register
Add: F241h DQ=0000h
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